SiCアライアンス

オールジャパンの「情報交差点」で、「パワー半導体 SiC」の開発に未来が見える。
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SiC関連データベース −物性−

  

光学的性質

物性データ 英語表記 データの概要 出典
バンドギャップ (exciton) band gap 3.265eV:4H-SiCの励起子ギャップ(6K) L.Patrick et al.: "Luminescence of 4H SiC, and Location of Conduction-Band Minima in SiC Polytypes," Phys. Rev. 137 (1965) A1515
3.024eV:6H-SiCの励起子ギャップ(6K) W.J. Choyke and L. Patrick: "Exciton Recombination Radiation and Phonon Spectra," Phys. Rev. 127 (1962) 1868
ラマン活性モード Raman active mode 3C, 6H, 4H, 15R, 21R-SiCのラマン活性モード D. W. Feldman et al.: "Phonon Dispersion Curves by Raman Scattering in SiC, Polytypes 3C, 4H, 6H, 15R, and 21R," Phys. Rev. 173 (1968) 787
屈折率 refractive index 300Kでの屈折率の波長依存性(467-691nm) P. T. B. Shaffer: "Refractive Index, Dispersion, and Birefringence of Silicon Carbide Polytypes," Appl. Opt. 10 (1971) 1034
吸収係数 absorption coefficient 4H、6H、8H、15R-SiCの吸収係数:波数依存性(室温) E.Biedermann: "The Optical Absorption Bands and Their Anisotropy in the Various Modifications of SiC," Solid State Commun. 3 (1965) 343

結晶学的性質

物性データ 英語標記 データの概要 出典
格子定数 lattice constant 3C-SiC: a=0.43596nm
6H-SiC: a=0.30806nm, c=1.51173nm
4H-SiC: a=0.30730nm, c=1.0053nm
不純物濃度依存性(4H-SiC)
A. H. Gomes de Mesquita: "Refinement of the Crystal Structure of SiC Type 6H," Acta Cryst. 23 (1967) 610
T. Matsumoto et al.: "Calculation of lattice constant of 4H-SiC as a function of impurity concentration," Mater. Sci. Forum 645-648 (2010) 247  
不純物拡散係数 diffusion coefficient 4H-SiC中のAl、Bの拡散係数(1900-2000℃)
B:1-3×10-11cm2/s、Al:7-9×10-14cm2/s (c軸方向)
B:6-8×10-11cm2/s、Al:3-4×10-13cm2/s (m軸方向)
S. I. Soloviev et al.: "Aluminum and Boron Diffusion into (1-100) Face SiC Substrates", Mater. Sci. Forum 389-393 (2002) 557
密度 density 3.211g/cm3(6H-SiC) A. H. Gomes de Mesquita: "Refinement of the Crystal Structure of SiC Type 6H," Acta Cryst. 23 (1967) 610
原子数密度 atomic density 4.829×1022/cm3(6H-SiC) A. H. Gomes de Mesquita: "Refinement of the Crystal Structure of SiC Type 6H," Acta Cryst. 23 (1967) 610

機械的性質

物性データ 英語表記 データの概要 出典
弾性定数 elastic constant 室温における4H-, 6H-SiCの弾性定数:C11 = 501±4GPa, C33 = 553±4GPa, C44 = 163± 4GPa, C12 = 111±5GPa, and C13 = 52±9GPa(4H、6H共通) K. Kamitani et al.:"The elastic constants of silicon carbide: A Brillouin-scattering study of 4H and 6H SiC single crystals", J. Appl. Phys. 82 (1997) 3152
体積弾性率 bulk modulus 221GPa(室温:4H、6H共通) K. Kamitani et al.: "The elastic constants of silicon carbide: A Brillouin-scattering study of 4H and 6H SiC single crystals," J. Appl. Phys. 82 (1997) 3152
剛性率 shear modulus 195GPa(室温:4H、6H共通) K. Kamitani et al.: "The elastic constants of silicon carbide: A Brillouin-scattering study of 4H and 6H SiC single crystals," J. Appl. Phys. 82 (1997) 3152
ビッカース硬度 Vickers hardness 室温−1300℃までの15R-SiCのビッカース硬度 M. H. Hong et al.: "Deformation-induced dislocations in 15R-SiC grown by sublimatio", Phil. Mag. Lett. 81 (2001) 823

熱的性質

物性データ 英語表記 データの概要 出典
熱伝導率 thermal conductivity 300−2300Kまでの6H-SiCの熱伝導率(実験及び理論) St. G. Mueller et al.: "Experimental and Theoretical Analysis of the High Temperature Thermal Conductivity of Monocrystalline SiC", Mater. Sci. Forum 264-268 (1998) 623
熱膨張係数 coefficient of thermal expansion 300−1600Kまでの6H-SiCの熱膨張係数 M. Stockmeier et al.: "Thermal Expansion Coefficient of 6H Silicon Carbide", Mater. Sci. Forum 600-603 (2009) 517
比熱 heat capacity 0.69J/gK(室温:4H、6H共通) Yu. Goldberg et al.: "Silicon Carbide," Properties of Advanced Semiconductor Materials, John Wiley & Sons, Inc. (2001) p. 95

電気的性質

物性データ 英語表記 データの概要 出典
不純物エネルギー impurity energy level N (nitrogen)
 3C-SiC
Hall effect: 48meV
DA pair PL: 53-55meV
 4H-SiC
Hall effect: 45meV (hexagonal site)、100meV (cubic site)
IR absorption: 51.8meV (hexagonal site)、91.4meV (cubic site)
 6H-SiC
Hall effect: 84-100meV (hexagonal site)、125-150meV (cubic site)
IR absorption: 81meV (hexagonal site)、137.6meV (cubic site 1)、142.4meV (cubic site 2)
B (boron)
 6H-SiC
Hall effect: 390meV
DLTS: 300meV
Al (aluminium)
PL: 191meV
DLTS: 280meV
B. Segall et al.: "Compensation in epitaxial cubic SiC films," Appl. Phys. Lett. 49 (1986) 584
W. G?tz et al.: "Nitrogen donors in 4H-silicon carbide," J. Appl. Phys. 73 (1993) 3332
W. Suttrop et al.: "Hall effect and infrared absorption measurements on nitrogen donors in 6H-silicon carbide," J. Appl. Phys. 72 (1992) 3708
G. Pensl and W. J. Choyke: "Electrical and Optical characterization of SiC," Physica B 185 (1993) 264
W. Suttrop et al.: "Boron-Related Deep Centers in 6H-SiC," Appl. Phys. A 51 (1990) 231
H. Matsuura et al.: "Dependence of acceptor levels and hole mobility on acceptor density and temperature in Al-doped p-type 4H-SiC epilayers," J. Appl. Phys. 96 (2004) 2708
M. H. Anikin et al.: "Investigation of deep levels in SiC by capacitance spectroscopy methods," Sov. Phys. Semicond. 19 (1985) 69
M. Ikeda et al.: "Site effect on the impurity levels in 4H, 6H, and 15R SiC, " Phys. Rev. 22 (1980) 2842  
有効質量 effective mass 伝導帯(単位:自由電子質量m0)
3C-SiC
 m([100]平行): 0.667
 m([100]垂直): 0.247
4H-SiC
 m(M→L方向): 0.33
 m(M→Γ方向): 0.58
 m(M→K方向): 0.31
価電子帯(単位:自由電子質量m0)
3C-SiC
 m([100]方向): 0.59(理論計算値)
 m([110]方向): 1.32(理論計算値)
 m([111]方向): 1.64(理論計算値)
4H-SiC
 m(c軸平行): 1.75
 m(c軸垂直): 0.66
R. Kaplan et al.: "Electron cyclotron resonance in cubic SiC," Solid State Commun. 55 (1985) 67
D. Volm et al.: "Determination of the electron effective-mass tensor in 4H SiC," Phys. Rev. B 53 (1996) 15409
C. Persson and U. Lindefelt: "Relativistic band structure calculation of cubic and hexagonal SiC polytypes," J. Appl. Phys. 82 (1997) 5496
C. Persson and U. Lindefelt: "Dependence of energy gaps and effective masses on atomic positions in hexagonal SiC," J. Appl. Phys. 86 (1999) 5036
N. T. Son et al.: "Hole effective masses in 4H SiC," Phys. Rev. B 61 (2000) R10544"  
インパクトイオン化係数 impact ionization coefficient 4H-SiC(室温):<0001>方向、<11-20>方向 A. O. Konstantinov et al.: "Study of Avalanche Breakdown and Impact Ionization in 4H Silicon Carbide," J. Electron Mater. 27 (1998) 335
T. Hatakeyama et al.: "Impact Ionization Coefficients of 4H-SiC," Mater. Sci. Forum 457-460 (2004) 673.
比誘電率 dielectric constant 3C-SiC:9.72
6H-SiC:10.03(c軸方向)、9.66(c軸垂直方向)
L. Patrick and W. J. Choyke: "Static Dielectric Constant of SiC," Phys. Rev. B 2 (1970) 2255
電子親和力 electron affinity 各種ポリタイプの電子親和力(室温) S. Yu. Davydov: "On the Electron Affinity of Silicon Carbide Polytypes," Semiconductors 41 (2007) 696
電子移動度
(ホール効果移動度)
electron Hall mobility 4H-SiC、6H-SiC
温度依存性、ドーピング濃度依存性(室温)、方位依存性(室温)
H. Matsunami and T. Kimoto: Step-controlled epitaxial growth of SiC: High quality homoepitaxy," Mater. Sci. Eng. R20 (1997) 125
W. J. Schaffer et al.: "Conductivity anisotropy in epitaxial 6H and 4H SiC," Mater. Res. Soc. Symp. 339 (1994) 595
M. Schadt et al.: "Anisotropy of the electron Hall mobility in 4H, 6H, and 15R silicon carbide," Appl. Phys. Lett. 65 (1994) 3120
正孔移動度
(ホール効果移動度)
hole Hall mobility 4H-SiC、6H-SiC
ドーピング濃度依存性(室温)
W. J. Schaffer et al.: "Conductivity anisotropy in epitaxial 6H and 4H SiC," Mater. Res. Soc. Symp. 339 (1994) 595
絶縁破壊電界強度 dielectric breakdown filed 4H-SiC(室温) A. O. Konstantinov et al.: "Study of Avalanche Breakdown and Impact Ionization in 4H Silicon Carbide," J. Electron Mater. 27 (1998) 335
飽和電子ドリフト速度 saturation electron drift velocity 3C-SiC、6H-SiC、4H-SiC:電界強度依存性、温度依存性 R. Mickevi?ius and J. H. Zhao: "Monte Carlo study of electron transport in SiC," J. Appl. Phys. 83 (1998) 3161