SiCアライアンス

オールジャパンの「情報交差点」で、「パワー半導体 SiC」の開発に未来が見える。
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SiC関連データベース −デバイス製造プロセス−

  

洗浄  Cleaning

プロセス小分類 英語表記 データの概要 参考文献
ドライプロセス(ガスエッチング) Dry process (gas etching) 4H-SiC, H2, 1000°C for 30min K. Ueno et al.: "4H-SiC MOSFETs utilizing the H2 surface cleaning technique," IEEE Electron Device Lett. 19 (1998) 244
3C, 6H, 4H-SiC, ~1019cm-2 UV photons (l=147nm) from Xe discharge V. V. Afanasev et al.: "Elimination of SiC/SiO2 interface states by preoxidation ultraviolet‐ozone cleaning," Appl. Phys. Lett. 68 (1996) 2141
ドライプロセス(プラズマエッチング) Dry process (plasma etching) 4H-SiC, atmospheric pressure H2 plasma H. Watanabe et al.: "Surface cleaning and etching of 4H-SiC(0001) using high-density atmospheric pressure hydrogen plasma," J. Nanosci. Nanotechnol. 11 (2011) 2802
4H-SiC, ECR plasma etching, 650W, H2: 60sccm, 400°C L. Huang et al.: "Cleaning of SiC surfaces by low temperature ECR microwave hydrogen plasma," Appl. Surf. Sci. 257 (2011) 10172
ウェットプロセス Wet process 6H-SiC, RCA SC1 etch or Piranha clean S. W. King et al.: "Wet Chemical Processing of (0001)Si 6H-SiC Hydrophobic and Hydrophilic Surfaces," J. Electrochem. Soc. 146 (1999) 1910
HCN Aqueous Solution M. Madani et al.: "SiC Cleaning Method by Use of Dilute HCN Aqueous Solutions," J. Electrochem. Soc. 155 (2008) H895

 
熱酸化  Thermal oxidation

プロセス小分類 英語表記 データの概要 参考文献
ドライ酸化 Dry oxidation 1050-1200°C, 3C, 6H and 4H-SiC A. Gölz et al.: "Oxidation kinetics of 3C, 4H, and 6H silicon carbide," Inst. Phys. Conf. Ser. 142 (1996) 633
950-1150°C, 4H-SiC, Si-face, C-face, a-face Y. Song et al.: "Modified Deal Grove model for the thermal oxidation of silicon carbide," J. Appl. Phys. 95 (2004) 4953
ウェット酸化 Wet oxidation 6H-SiC, 1050-1300°C, bubbling oxygen through de-ionized water at 95°C L.A. Lipkin and J.W. Palmour: "Improved oxidation procedures for reduced SiO2/SiC defects," J. Electron. Mater. 25 (1996) 909
4H-SiC, 1200°C, O2 and H2 flow rate ratio = 1.5:0.5 K. Fukuda, W.J. Cho, K. Arai, S. Suzuki, J. Senzaki, T. Tanaka: "Effect of oxidation method and post-oxidation annealing on interface properties of metal-oxide-semiconductor structures formed on n-type 4H-SiC C(000-1) face," Appl. Phys. Lett. 77 (2000) 866
面方位依存性 Surface orientation dependence 6H-SiC, from (0001)Si or (000-1)C to (11-20) by 15°, 30°, 45° and 90° K. Ueno: "Orientation Dependence of the Oxidation of SiC Surfaces," phys. sol. stat. (a) 162 (1997) 299
オフ角度依存性 Off-angle dependence 4H-SiC, dry and wet oxidation: 0.5° and 8° off-oriented (000-1)C surface Y. Hijikata et al.: "Off-Angle Dependence of Characteristics of 4H-SiC-Oxide Interfaces," Mater. Sci. Forum 527-529 (2006) 1003
POA (post oxidation anneal):窒化処理 POA: nitridation 4H-SiC, NO, 1atm, 0.5l/min, 1175°C for 2hour G. Y. Chung et al.: "Improved Inversion Channel Mobility for 4H-SiC MOSFETs Following High Temperature Anneals in Nitric Oxide," IEEE Electron Device Lett. 22 (2001) 176
POA (post oxidation anneal):パイロジェニック再酸化 POA: pyrogenic re-oxidation 6H-SiC, 800-1000°C, bubbling oxygen through de-ionized water at 95°C L.A. Lipkin and J.W. Palmour: "Improved oxidation procedures for reduced SiO2/SiC defects," J. Electron. Mater. 25 (1996) 909
6H and 4H-SiC, Ar, 1200°C, 30min plus H2/O2 ratio = 0.00-0.67, 950°C for 180min R. Kosugi et al.: "Strong Dependence of the Inversion Mobility of 4H and 6H SiC(0001) MOSFETs on the Water Content in Pyrogenic Re-Oxidation Annealing," IEEE Electron Device Lett. 23 (2002) 136
POA (post oxidation anneal):水素アニール POA: H2 anneal 4H-SiC, Ar, 1200°C, 30min plus H2, 400-1000°C for 30min W. J. Cho et al.: "Improvement of charge trapping by hydrogen post-oxidation annealing in gate oxide of 4H-SiC metal-oxide-semiconductor capacitors," Appl. Phys. Lett. 77 (2000) 1215
POA (post oxidation anneal):Arアニール POA: Ar anneal 4H-SiC, Ar, 1200°C for 1hour W. J. Cho et al.: "Study on electron trapping and interface states of various gate dielectric materials in 4H-SiC metal-oxide-semiconductor capacitors," Appl. Phys. Lett. 77 (2000) 2054
POA (post oxidation anneal):POCl3アニール POA: POCl3 anneal 4H-SiC, gas mixture of POCl3, O2, and N2, 1000°C for 10min D. Okamoto et al.: "Removal of near-interface traps at SiO2/4H-SiC (0001) interfaces by phosphorus incorporation," Appl. Phys. Lett. 96 (2010) 203508

 
メタライゼーション  Metallization

プロセス小分類 英語表記 データの概要 参考文献
ショットキー接合:金属材料依存性(n型) Schottky contact: barrier heights for various contact metals (n-type) n-type 6H and 4H-SiC, Si- and C-face, Ti, Ni, Au A. Itoh and H. Matsunami: "Analysis of Schottky Barrier Heights of Metal/SiC Contacts and Its Possible Application to High-Voltage Rectifying Devices," phys. status. solidi. (a) 162 (1997) 389
ショットキー接合:金属材料依存性(p型) Schottky contact: barrier heights for various contact metals (p-type) p-type 6H-SiC, Si- &C-face, Pd, Ni, Au, Ag, Mg, Ti and Al J. R. Waldrop: "Schottky barrier height of metal contacts to p‐type alpha 6H‐SiC," J. Appl. Phys. 75 (1994) 4548
オーミック接合(n型) Ohmic contact to n-type SiC n-type 6H-SiC, 950°C in vacuum for 2min J. Crofton et al.: "High temperature ohmic contact to n-type 6H-SiC using nickel," J. Appl. Phys. 77 (1995) 1317
n-type 4H-SiC, Ni, 1000°C in Ar for 2min S. Tanimoto et al.: "Ohmic contact structure and fabrication process applicable to practical SiC devices," Mater. Sci. Forum 389-393 (2002) 879
オーミック接合(p型) Ohmic contact to p-type SiC p-type 6H-SiC, 10-90wt.% alloy of Al and Ti, 1000°C for 2min J. Crofton et al.: "Titanium and aluminum-titanium ohmic contacts to p-type SiC," Solid State Electron. 41 (1997) 1725
p-type 4H-SiC, Ti/Al (Ti deposition followed by Al), thickness = 80nm/375nm, 1000°C in Ar for 2min S. Tanimoto et al.: "Ohmic contact structure and fabrication process applicable to practical SiC devices," Mater. Sci. Forum 389-393 (2002) 879
p-type 4H-SiC, Al, Al-Ti-Al, Ti-Al, 1000°C in vacuum for 2min B. J. Johnson and M. A. Capano: "Mechanism of ohmic behavior of Al/Ti contacts to p-type 4H-SiC after annealing," J. Appl. Phys. 95 (2004) 5616
厚さ依存性 Metal thickness dependence n-type 4H-SiC, Ni, 20-200nm, 1000°C in Ar for 2min S. Tanimoto et al.: "Ohmic contact structure and fabrication process applicable to practical SiC devices," Mater. Sci. Forum 389-393 (2002) 879
シンタリング条件 Annealing temperature dependence n-type 4H-SiC, Ni, 50nm, 800-1000°C in Ar for 2min S. Tanimoto et al.: "Ohmic Contacts for Power Devices on SiC," Silicon Carbide, Recent Major Advances, Springer (2003) p. 651

 
イオン注入  Ion implantation

プロセス小分類 英語表記 データの概要 参考文献
窒素(n型):ドーズ量依存性 Nitrogen (n-type): dose dependence 4H-SiC, N box implantation@500°C, N concentration: 3.8E18, 7.4E19, 3.0E20cm-3, annealing@1700°C for 30min M. Laube et al.: "Electrical activation of high concentrations of N+ and P+ ions implanted into 4H-SiC," J. Appl. Phys. 92 (2002) 549
6H and 4H-SiC, N dose: 3E13-1E16cm-2, implantation@RT, 500°C and 800°C, annealing@1200-1500°C in Ar for 30min T. Kimoto et al.: "Nitrogen Ion Implantation into a-SiC Epitaxial Layers," phys. status. solidi. (a) 162 (1997) 263
窒素(n型):アニール条件依存性 Nitrogen (n-type): annealing condition dependence 6H and 4H-SiC, N dose: 3E13-1E16cm-2, implantation@RT, 500°C and 800°C, annealing@1200-1500°C in Ar for 30min T. Kimoto et al.: "Nitrogen Ion Implantation into a-SiC Epitaxial Layers," phys. status. solidi. (a) 162 (1997) 263
窒素(n型):注入エネルギー依存性 Nitrogen (n-type): ion energy dependence 6H-SiC, N (peak concentration: 1E19cm-3), 30-190keV S. Ahmed et al.: "Empirical depth profile simulator for ion implantation in 6Ha-SiC," J. Appl. Phys. 77 (1995) 6194
リン(n型):ドーズ量依存性 Phosphor (n-type): dose dependence 4H-SiC, box implantation@500°C, P concentration: 2.6E18, 5.0E19, 2.0E20cm-3, annealing@1700°C for 30min M. Laube et al.: "Electrical activation of high concentrations of N+ and P+ ions implanted into 4H-SiC," J. Appl. Phys. 92 (2002) 549
4H-SiC, box implantation@500°C, P total dose: 1E15-6E16cm-2, annealing@1700°C in Ar for 1 or 30min Y. Negoro et al.: "Electronic behaviors of high-dose phosphorus-ion implanted 4H-SiC (0001)," J. Appl. Phys. 96 (2004) 224
リン(n型):アニール条件依存性 Phosphor (n-type): annealing condition dependence 6H-SiC, box implantation, P concentration: 1E18cm-3, annealing@1400-1700°C for 30min T. Troffer et al.: "Phosphorus related donors in 6H-SiC generated by ion implantation," J. Appl. Phys. 80 (1996) 3739
4H-SiC, box implantation@Rt or 800°C, P total dose: 1E16cm-2, annealing@1100-1700°C in Ar for 30min Y. Negoro et al.: "Phosphorus Ion Implantation into 4H-SiC (0001) and (11-20)," Mater. Sci. Forum 389-393 (2002) 783
4H-SiC, box implantation@500°C, P total dose: 7E15cm-2, annealing@1000-1700°C in Ar for 30sec-500min J. Senzaki et al.: "Influences of post implantation annealing conditions on resistance lowering in high-phosphorus-implanted 4H-SiC," J. Appl. Phys. 94 (2003) 2942
リン(n型):注入エネルギー依存性 Phosphor (n-type): ion energy dependence 6H-SiC, P implantation@750°C, 50keV-4Mev, 1500-1700°C for 15min M. V. Rao et al.: "Phosphorus and boron implantation in 6H-SiC," J. Appl. Phys. 81 (1997) 6635
アルミニウム(p型):ドーズ量依存性 Aluminum (p-type): dose dependence 6H-SiC, Al dose: 1E14-1E16cm-2, 1200-1500°C in Ar for 30min T. Kimoto et al.: "Aluminum and boron ion implantations into 6H-SiC epilayers," J. Electron. Mater. 25 (1996) 879
アルミニウム(p型):アニール条件依存性 Aluminum (p-type): annealing condition dependence 4H-SiC, box implantation, Al total dose: 2.0E13cm-2, annealing@1700°C in Ar for 1 or 30min Y. Negoro et al.: "Carrier compensation near tail region in aluminum- or boron-implanted 4H-SiC (0001)," J. Appl. Phys. 98 (2005) 043709
アルミニウム(p型):注入エネルギー依存性 Aluminum (p-type): ion energy dependence 6H-SiC, Al (peak concentration: 1E20cm-3), 50keV-4MeV, annealing@1500-1700°C for 10-15min E. M. Handy et al.: "Al, B, and Ga ion-implantation doping of SiC," J. Electron. Mater. 29 (2000) 1340
6H-SiC, Al (peak concentration: 1E19cm-3), 30-195keV S. Ahmed et al.: "Empirical depth profile simulator for ion implantation in 6Ha-SiC," J. Appl. Phys. 77 (1995) 6194
ホウ素(p型):ドーズ量依存性 Boron (p-type): dose dependence 6H-SiC, B dose: 1E14-2E16cm-2, 1200-1500°C in Ar for 30min T. Kimoto et al.: "Aluminum and boron ion implantations into 6H-SiC epilayers," J. Electron. Mater. 25 (1996) 879
ホウ素(p型):アニール条件依存性 Boron (p-type): annealing condition dependence 4H-SiC, box implantation, B total dose: 2.0E13cm-2, annealing@1700°C in Ar for 1 or 30min Y. Negoro et al.: "Carrier compensation near tail region in aluminum- or boron-implanted 4H-SiC (0001)," J. Appl. Phys. 98 (2005) 043709
4H-SiC, B (peak concentration: 5E18cm-3), 1700-1800°C for 1-3hour H. Bracht et al.: "Modeling of Boron Diffusion in Silicon Carbide," Mater. Sci. Forum 353-356 (2001) 327
ホウ素(p型):注入エネルギー依存性 Boron (p-type): ion energy dependence 6H-SiC, B implantation@700°C, 50keV-4Mev, 1500-1700°C for 15min M. V. Rao et al.: "Phosphorus and boron implantation in 6H-SiC," J. Appl. Phys. 81 (1997) 6635
6H-SiC, B (peak concentration: 1E20cm-3), 50keV-4MeV, annealing@1500-1700°C for 10-15min E. M. Handy et al.: "Al, B, and Ga ion-implantation doping of SiC," J. Electron. Mater. 29 (2000) 1340
6H-SiC, B (peak concentration: 1E19cm-3), 40-300keV S. Ahmed et al.: "Empirical depth profile simulator for ion implantation in 6Ha-SiC," J. Appl. Phys. 77 (1995) 6194
イオン注入誘起欠陥:積層欠陥 Ion implantation induced defects: SF 4H-SiC, B, Al implantation@RT, 0.5?2.0MeV, 6E13-6E15cm-2, 1700°C in Ar for 30min T. Ohno and Y. Kobayashi: "Structure and distribution of secondary defects in high energy ion implanted 4H-SiC," J. Appl. Phys. 89 (2001) 933
4H-SiC, B, Al implantation@RT, 0.5-2.0MeV, 2.6E13-6E15cm-2, 1300-1700°C in Ar for 30min T. Ohno and Y. Kobayashi: "Difference of secondary defect formation by high energy B+ and Al+ implantation into 4H-SiC," J. Appl. Phys. 91 (2002) 4136
イオン注入誘起欠陥:キャリア散乱中心 Ion implantation induced defects: carrier scattering centers 4H-SiC, box implantation@RT or 500°C, Al total dose: 4E15-6E16cm-2, annealing@1800°C in Ar for 1-180min Y. Negoro et al.: "Electrical activation of high-concentration aluminum implanted in 4H-SiC," J. Appl. Phys. 96 (2004) 4916
イオン注入誘起欠陥:転位ループ Ion implantation induced defects: dislocation loop 4H-SiC, N box implantation@600°C, 10-230keV, N concentration: 1E18cm-3; Al box implantation@600°C, 30-300keV, Al concentration: 1E18cm-3; annealing@1680-1720°C in Ar for 1-5min M. Nagano et al.: "Electrical activation of high-concentration aluminum implanted in 4H-SiC," J. Appl. Phys. 108 (2010) 013511
イオン注入誘起欠陥:深い準位 Ion implantation induced defects: deep centers 4H-SiC, N, P, Al box implantation, total dose: 5E10cm-2, 1000°C in Ar for 2min, 1700°C in Ar for 30min K. Kawahara et al.: "Detection and depth analyses of deep levels generated by ion implantation in n- and p-type 4H-SiC," J. Appl. Phys. 106 (2009) 013719
アニール表面荒れ抑制:RTA Rapid thermal annealing 4H-SiC, P dose: 7E15cm-2, 1700°C in Ar for 1min J. Senzaki et al.: "Improvements in Electrical Properties of n-Type-Implanted 4H-SiC Substrates Using High-Temperature Rapid Thermal Annealing," Mater. Sci. Forum 389-393 (2002) 795
アニール表面荒れ抑制:シラン添加 Annealing: silane addition 4H-SiC, P dose: 7E15cm-2, 1700°C in Ar for 1min M. A. Capano et al.: "Surface roughening in ion implanted 4H-silicon carbide," J. Electron. Mater. 28 (1999) 214
アニール表面荒れ抑制:カーボン膜コーティング Annealing: carbon film passivation 4H-SiC(0001), spin-coated photoresist converted to graphite by thermal treatment@750°C in Ar for 15min Y. Negoro et al.: "Electronic behaviors of high-dose phosphorus-ion implanted 4H-SiC (0001)," J. Appl. Phys. 96 (2004) 224